Description
In backup power systems, it’s often necessary to “OR” multiple batteries, such as when switching to an alternative battery while the primary one is drained. For small currents, this can be done with a simple diode, but at higher currents, diodes become inefficient due to energy loss from their forward voltage, wasting up to 10% of power. To solve this, an active ‘ideal’ diode circuit was created using a high-current MOSFET. This MOSFET significantly reduces the forward voltage to just 30mV, optimizing efficiency and minimizing power loss compared to traditional diodes.
Specifications
- Reverse voltage rating 40V
- Current rating 600A
- Package SOT-227 (footprint 25x38mm)
- M4 screw terminals suitable for 4mm and 5mm ring terminals
- Electrical isolation to metal base 2500VAC, 1 minute
- Thermal resistance junction to metal case (RθJC) 0.21°C/W () *
- Thermal resistance junction to ambient (RθJA) ~20°C/W () *
- Maximum junction temperature 175°C
- Minimum working voltage 8VDC
- Drain-source resistance (Rds) 0.0011Ω
- Forward voltage (Vfw) ~30mV or 1.1mV/A, whichever is larger
- Includes 3M thermal conductive pad
- ~12cm (5″) ground lead with serrated 4mm ring terminal
75V model
- Reverse voltage rating 75V
- Current rating 480A
- Drain-source resistance (Rds) 0.0019Ω
- Forward voltage (Vfw) ~30mV or 1.9mV/A, whichever is larger
*) Practical thermal example: Diode with 195A current (resulting in 42W dissipation), screw mounted in the middle of a 50cm extruded aluminium 40x40mm profile without any thermal conductive materials, put flat on a bench. After thermal equilibrium at 20 degrees ambient, temperature of diode is 90°C and temperature of the alumiunium (in the middle) is 60°C. See thermal image. At such current, a normal diode would approach 300°C or more…
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